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1 The ALD Powerhouse

2 Picosun Defining the future of ALD Picosun s history and background date back to the very beginning of the field of atomic layer deposition. ALD was invented in Finland in 1974 by Dr. Tuomo Suntola, who today serves as Member of the Picosun Board of Directors. Picosun founder and Chief Technology Officer (CTO) Mr. Sven Lindfors has created outstanding ALD systems since 1975 and is known as the world s most experienced ALD reactor designer. SEMI organization President and CEO Stanley T. Myers presents the European SEMI 2004 award to Dr. Tuomo Suntola at Semicon Europa 2004 exhibition in Munich. 30 years exclusively on ALD Today Picosun combines over 30 years of continuous, exclusive ALD system development with over 200 person years of first hand know-how in the field. The company was established in 2003 and our core team consists of highly trained academic personnel, all experts in ALD. Picosun team, described by many as the best ALD team ever, has contributed to over 100 patents on ALD and our close collaboration with top research organizations and major industries solidifies our frontline position in the global ALD network. Unique scalability from research to production Picosun is an international equipment manufacturer with a world-wide sales and service organization. We develop and manufacture ALD reactors for all kinds of micro- and nanotechnology applications. Picosun provides its customers with user-friendly, reliable and productive ALD process tools with top level after-sales, demo coating and process consulting services. The company is based in Espoo, Finland and has its US headquarters in Detroit. SUNALE ALD systems are used by leading scientific institutions and companies across four continents. We get it right Picosun Board of Directors. Back row, from left to right: Prof. Lauri Niinistö, Mr. Kustaa Poutiainen (CEO), Prof. Jorma Routti, and Mr. Juhana Kostamo (Managing Director). Front row, from left to right: Dr. Tuomo Suntola and Mr. Sven Lindfors (CTO). What makes us special in the field is our exclusive focus on ALD. We get it right, where many just struggle. We understand the customer s needs and can offer unmatched quality coating solutions that fulfill even the most stringent research and productivity requirements. With our uniquely compact, upscalable and versatile reactor design, there is no hindrance to the transition from research to industrial production.

3 ALD Winner technology for thin films As a surface controlled, self-limiting chemical vapor processing method, ALD ensures 100 % uniform, conformal, defect and pinhole free thin film growth on even the most challenging nanoscale architectures such as ultra-high aspect ratio trenches and high tortuosity through-porous samples. Wide range of e.g. metal oxide, nitride, sulfide, fluoride and pure metal coatings as well as nanolaminates, mixed oxide and doped thin films can be used in numerous applications for example in micro- and optoelectronics, optics, catalyst manufacturing, clean and renewable energy technologies, water purification and innovative packaging materials. Examples of ALD Applications Material Aluminum oxide, Al 2 Tin dioxide, SnO 2 Titanium dioxide, TiO 2 Vanadium oxides, V 2 O 5 and VO 2 Zinc oxide, ZnO Titanium nitride, TiN Applications MEMS coatings, passivation coatings, insulator layers, diffusion barriers, etch stop layers Optoelectronics, gas sensors, antistatic coatings, ARC Photocatalytic coatings, photovoltaics, antistatic coatings Catalyst coatings, optical switching materials, energy storage Semiconductor materials, buffer layers in solar cells, UV blocking layers Metal electrodes, diffusion barriers Tantalum nitride, Ta 3 N 5 Hafnium dioxide, HfO 2 High-k dielectrics Zirconium dioxide, ZrO 2 Iridium, Ir Platinum, Pt Ruthenium, Ru Metal electrodes

4 SUNALE R-SERIES ALD process tools Manual or semi-automatic processing for research and development High standard R&D requires the best equipment. SUNALE R-series ALD tools unique hot-wall top-flow dual-chamber design guarantees the deposition of highest quality ALD films with excellent uniformity even on the most challenging structures such as through-porous samples, ultra-high aspect ratio trenches or nanoparticulate powders. Our highly functional and easily exchangeable precursor sources for liquid, gaseous and solid chemicals enable particle-free processing of a wide range of materials on wafers, 3D objects and all nanoscale features. Although capable of serving even the most stringent overall requirements of thin film research of the highest calibre, SUNALE R-series reactors are specifically designed for research that aims to bring its achievements out of the laboratory, into industrial manufacturing. Unmatched versatility, speed and quality are combined with a compact, space-saving package ready to be integrated e. g. to vacuum line, glove box etc. systems. R-series ALD tools invite corporate funding -- because of their unique scalability the results do not fall into the usual technology gap between research and production but can be directly transferred into production with SUNALE P-series. R-series ALD tools are the systems of choice for the most productive research work. Material Thickness Uniformity AI 2 (300 C) 47.2 nm 0.21 % (1σ) Plasma-Al 2 (120 C) 55.8 nm 1.78 % (1σ) HfO 2 (250 C) 30.6 nm 1.96 % (1σ) TiO 2 (300 C) nm 0.6 % (1σ) TiN (400 C) 25.5 nm 1.57 % (1σ) ZnO (300 C) 28.1 nm 0.94 % (1σ) Pt (300 C) 39.3 nm 3.41 % (1σ) Excellent film uniformities achieved by R&D customers in single wafer processes. Specification Measured data Within wafer < 1 % 0.6 % Within batch < 2 % 1.0 % Batch to batch < 2 % 0.3 % Al 2 batch process for production. Uniformity: 1σ, STD, 9 points in each 4 Si wafer.

5 SUNALE R-SERIES technical features Basic features Substrate size and type Process temperature Substrate loading options Precursors Measures Weight Dimensions (W x H x D) mm single wafers Wafer minibatch up to 150 mm 156 mm x 156 mm solar Si wafers 3D objects Powders and particles Through-porous samples C, higher on request Pneumatic lift (manual loading) Manual loadlock Robot for semi-automatic loading Cassette-to-cassette cluster tool Liquid, solid, gas, ozone, plasma Up to 12 sources with 6 separate inlets 350 kg Depending on options Minimum 146 cm x 146 cm x 84 cm Maximum 189 cm x 206 cm x 111 cm Utilities Power supply Vacuum pump Carrier gas Compressed dry air Cooling water Exhausts 400 VAC, 3 phase, 50/60 Hz, Fuse 3 x 16 Amps. Power depending on options. Recommendation min m 3 /h, mechanical particle trap % N 2 / Ar, min 2 slm bar overpressure Only required for dry vacuum pump and plasma generator, not for the reactor Vacuum pump, source cabinets Options Stop-flow, QCM, RGA, UHV compatibility, N 2 generator, gas scrubber, customized designs

6 The ALD Powerhouse